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Introduction to Semiconductor Devices

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Participants join this course to develop a clear and conceptual understanding of semiconductor devices, which is crucial for advanced studies and careers in electronics and electrical engineering. The course helps bridge the gap between theoretical semiconductor physics and real-world device applications. It is especially valuable for students preparing for university exams, GATE, and other competitive examinations, as well as for learners aiming to build a strong foundation for VLSI, embedded systems, power electronics, and renewable energy domains.

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Course details

Semiconductor devices form the backbone of modern electronics and power today’s communication systems, computers, renewable energy solutions, and consumer gadgets. This course builds a strong foundation in the basic principles of semiconductor physics and device operation. It helps learners understand how theoretical concepts translate into real electronic components used in practice. The course is designed mainly for undergraduate students of Electronics and Communication Engineering (ECE), Electrical Engineering (EE), and related disciplines who want to strengthen their core understanding of electronic devices.
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NPTEL-NOC IITM

Course suitable for

Key topics covered

Learn how energy bands work in solids and how charge carriers behave
Understand how electrons and holes move through semiconductor materials
Study pn junction diodes and see how they work in rectifiers and basic circuits
Learn the structure and working of MOS capacitors
Understand how MOSFETs operate and why they are widely used in electronics
Get introduced to optoelectronic devices like LEDs and how they produce light
Learn the basic working of solar cells and their role in energy applications

Course content

The course is readily available, allowing learners to start and complete it at their own pace.

80 lectures31 hr 19 min

Introduction to semiconductor devices
13 min
1.1 Types of Semiconductors
7 min
1.2 Classical Vs Quantum Mechanics
13 min
1.3 Electrons in infinite and finite 1D potential well
33 min
1.4 3D potential well model of atom and Bohr's model
12 min
1.5 Covalent bonds and inter-atomic interactions in Silicon
24 min
1.6 Energy band formation
18 min
1.7 Electron hole pair generation
23 min
1.8 Direct and Indirect bandgap semiconductors
26 min
1.9 Energy levels in infinite and finite potential wells (short demo)
5 min
2.1 Effective mass in Semiconductors
15 min
2.2 Intrinsic carrier density
12 min
2.3 Doping and extrinsic semiconductors
29 min
2.4 Fermi level in extrinsic semiconductors
29 min
2.5 Temperature dependence of Fermi level
25 min
2.6 Temperature dependence of Fermi level
13 min
2.7 Charge neutrality relationship
10 min
2.8 Drift current and energy band representation of kinetic energy of carriers
32 min
3.1 Semiconductor bands in a electric field
22 min
3.2 Diffusion current
16 min
3.3 Non-uniform doping
20 min
3.4 Equilibrium Vs Nonequilibrium carrier response
19 min
3.5 Minority carrier diffusion equation (MCDE) - Example problems
41 min
3.6 Quasi Fermi level in nonequilibrium conditions
20 min
3.7 Quasi Fermi level and minority carrier diffusion length
15 min
3.8 Semiconductor device fabrication
6 min
4.1 PN Junctions - An introduction
22 min
4.2 PN Junction electrostatics
33 min
4.3 Energy band diagram of PN junction
30 min
4.4 Depletion width and peak electric field
15 min
4.5 PN junction electrostatics - examples
35 min
4.6 Demo of PN Junction Lab on Nanohub
19 min
5.1 Forward and reverse biased PN junctions
25 min
5.2 Minority carrier injection in PN junctions
32 min
5.4 Current in reverse biased PN junction
20 min
5.5 Depletion capacitance in PN junction
22 min
5.6 Non-idealities in PN junction diode
29 min
5.7 Nanohub Demo - PN Junction with applied bias
13 min
6.1 Schottky barrier in metal-semiconductor junction
30 min
6.2 Current flow across a Schottky barrier
26 min
6.3 Ohmic vs rectifying contacts
14 min
6.4 An Ideal MOS Capacitor
21 min
6.5 Operating regimes of a MOSCAP
15 min
6.6 Simplified band diagrams of accumulation and depletion in MOSCAP
11 min
6.7 Inversion in a MOSCAP
20 min
7.1 NMOSCAP in accumulation mode
23 min
7.2 NMOSCAP in depletion mode
16 min
7.3 NMOSCAP in inversion mode
16 min
7.4 Exact solution vs delta-depletion approximation
39 min
7.5 Threshold voltage in a MOSCAP
15 min
7.6 Nanohub Demo - MOSCAP tool
25 min
8.1 Non-ideal MOS Capacitor
43 min
8.2 MOSCAP Capacitance-Voltage (CV) Characteristics
35 min
8.3 Example problems with MOSCAPs
33 min
8.4 Impact of doping, oxide thickness and temperature on CV
22 min
8.5 Nanohub Demo - MOS CV
18 min
9.1 Introduction to MOSFET
23 min
9.2 Operating modes of a MOSFET
29 min
9.3 IV Characteristics of a long channel MOSFET
35 min
9.4 Example problems with MOSFETs
19 min
9.5 MOSFET device metrics
43 min
9.6 CMOS Technology
13 min
10.1 MOSFET Scaling and technology nodes
26 min
10.2 Limits of scaling
30 min
10.3 Current characteristics of a short channel MOSFET
33 min
10.4 Threshold voltage characteristics of short channel MOSFET
25 min
10.5 MOSFETs in the 21st century
22 min
11.1 Optical absorption and bandgap
28 min
11.2 Introduction to solar cells
35 min
11.3 Efficiency of a solar cell
16 min
11.4 Types of photodetectors
28 min
11.5 PIN and avalanche Photodectectors
19 min
11.6 Photodetector metrics
18 min
12.1 Radiative absoption and emission processes
32 min
12.2 Materials for optoelectronic devices
33 min
12.3 Operation of a light emitting diode (LED)
18 min
12.4 LED emission spectrum
18 min
12.5 Stimulated emission and lasing
28 min
Introduction to Semiconductor Devices 1
49 min
LIVE_Introduction to Semiconductor Devices - Prof. Naresh Kumar Emani
44 min

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Questions and Answers

Q: You're debugging a failed control PCB after a 24 V load dump. The symptom set: input diode reads short both directions, upstream fuse intact, downstream LDO now overheats at 120 mA no-load. You're searching "TVS diode shorted after load dump why LDO overheating". What's the root cause that fits all observations?

A: A permanent clamp explains the bidirectional short, the surviving fuse, and why the LDO is burning power with no load. B explains leakage and heat but not a dead short both ways. C can heat copper but doesn't present as a silicon short on a DMM. D shifts blame to the regulator yet doesn't explain the measured diode behavior upstream.

Q: You're reviewing rev 4 schematics against as-built for a high-side switch. The MOSFET symbol shows body diode orientation ambiguous and the note says "D-S intrinsic diode". You're Googling "MOSFET body diode orientation schematic confusion high side switch". What interpretation keeps functional safety intact?

A: Recognizing the intrinsic diode path forces you to account for reverse feed, which matches real silicon behavior and DFMEA expectations. B mixes channel conduction with diode physics and drops an off-state hazard. C invents device type from a missing symbol, a classic drawing trap. D relies on documentation optimism instead of physics.

Q: You're sanity-checking thermal margin on a TO-220 diode at 1 A forward current, 0.9 V drop, RθJA ≈ 60 °C/W, ambient 50 °C. You're searching "estimate diode junction temperature back of envelope". Where does the junction land?

A: Working backwards, power times thermal resistance stacked on ambient gives the junction. B double-counts optimism from typical curves. C inflates temperature without a power basis. D invents convection gains without geometry or airflow.

Q: A BJT amplifier shows beta collapse after ESD: Ic maxes at 20 mA regardless of base drive, Vce(sat) rises, leakage increases with temperature. You're Googling "BJT beta collapse after ESD failure mode". What's the failure?

A: Damaged BE junction explains low beta, temp-sensitive leakage, and higher Vce(sat). B would clamp voltages differently and usually kill gain entirely. C limits current but doesn't explain leakage growth. D is an operating issue, not a post-ESD signature.